HMC474SC70

Features: Gain: 15 dBP1dB Output Power: +8 dBmOutput IP3: +20 dBmCascadable 50 Ohm I/OsSingle Supply: +3V to +10VIndustry Standard SC70 PackageApplication• Cellular / PCS / 3G• WiBro / WiMAX / 4G• Fixed Wireless & WLAN• CATV, Cable Modem & DBS• Microwave Radio...

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SeekIC No. : 004364109 Detail

HMC474SC70: Features: Gain: 15 dBP1dB Output Power: +8 dBmOutput IP3: +20 dBmCascadable 50 Ohm I/OsSingle Supply: +3V to +10VIndustry Standard SC70 PackageApplication• Cellular / PCS / 3G• WiBro / W...

floor Price/Ceiling Price

Part Number:
HMC474SC70
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

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Upload time: 2024/11/21

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Product Details

Description



Features:

Gain: 15 dB
P1dB Output Power: +8 dBm
Output IP3: +20 dBm
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Industry Standard SC70 Package



Application

• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc)

Collector Bias Current (Icc)

RF Input Power (RFin)(Vcc = +2.4 Vdc)

Junction Temperature

Continuous Pdiss (T = 85 )
(derate 4.3 mW/ above 85 )

Thermal Resistance
(junction to lead)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+6.0 Vdc

35 mA

+5 dBm

150

0.280 W

232 /W

-65 to +150

-40 to +85

Class 1B



Description

The HMC474SC70(E) is a general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 6 GHz. This industry standard SC70 packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage with up to +8 dBm output power. The HMC474SC70(E) offers 15 dB of gain with a +20 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply as low as +3V. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.




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