HMC471MS8G

Features: ·+20 dBm P1dB Output Power·20 dB Gain·Output IP3: +34 dBm·Supply (Vs): +6V to +12V·14.9 mm2 Ultra Small 8 Lead MSOPApplicationThe HMC471MS8G is a dual RF/IF gain block & LO or PA driver:• Cellular / PCS / 3G• Fixed Wireless & WLAN• CATV, Cable Modem & DBS...

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SeekIC No. : 004364103 Detail

HMC471MS8G: Features: ·+20 dBm P1dB Output Power·20 dB Gain·Output IP3: +34 dBm·Supply (Vs): +6V to +12V·14.9 mm2 Ultra Small 8 Lead MSOPApplicationThe HMC471MS8G is a dual RF/IF gain block & LO or PA drive...

floor Price/Ceiling Price

Part Number:
HMC471MS8G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

·+20 dBm P1dB Output Power
·20 dB Gain
·Output IP3: +34 dBm
·Supply (Vs): +6V to +12V
·14.9 mm2 Ultra Small 8 Lead MSOP



Application

The HMC471MS8G is a dual RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment



Pinout

  Connection Diagram




Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
Collector Bias Current (Icc) 100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature 150

Continuous Pdiss (T = 85 )
(derate 32.6 mW/ above 85 )

2.12 W
Thermal Resistance
(junction to ground paddle)
30.7 /W
Storage Temperature -65 to +150
Operating Temperature -40 to +85



Description

The HMC471MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifi ers combined utilizing external 90° hybrids to create a high linearity driver amplifi er. Each amplifi er in the HMC471MS8G offers 20 dB of gain, +20dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifi er circuit delivers up to +21 dBm P1dB with +36dBm OIP3 for specific application bands through 4 GHz.


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