HMC469MS8G

Features:

·+18 dBm P1dB Output Power
·15 dB Gain
·Output IP3: +34 dBm
·Supply (Vs): +5V to +12V
·14.9 mm2 Ultra Small 8 Lead MSOP


Application

The HMC469MS8G is a dual RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment


Pinout




Specifications

Collector Bias Voltage (Vcc)	+6.0 Vdc
Collector Bias Current (Icc)	100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc)	+17 dBm
Junction Temperature	150
Continuous Pdiss (T = 85 ) (derate 29.58 mW/ above 85 )	1.92 W
Thermal Resistance (junction to ground paddle)	33.8 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC469MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifi ers combined utilizing external 90° hybrids to create a high linearity driver amplifi er. Each amplifi er in the HMC469MS8G offers 15 dB of gain, +18dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The combined dual amplifi er circuit delivers up to +20 dBm P1dB with +35dBm OIP3 for specific application bands through 4 GHz.