Features: +26 dBm P1dB Output PowerGain: 16 dB+30 dBm Output IP3Supply Voltage: +8.0V @ 290 mA50 Ohm Matched Input/Output3.12 mm x 1.63 mm x 0.1 mmApplicationThe HMC464 wideband driver is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & Space• ...
HMC464: Features: +26 dBm P1dB Output PowerGain: 16 dB+30 dBm Output IP3Supply Voltage: +8.0V @ 290 mA50 Ohm Matched Input/Output3.12 mm x 1.63 mm x 0.1 mmApplicationThe HMC464 wideband driver is ideal for:...
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DescriptionThe HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 ...
Features: Pout: -7 dBmPhase Noise: -105 dBc/Hz @100 KHz Typ.No External Resonator NeededSingle Sup...
Drain Bias Voltage (Vdd) | +9.0 Vdc |
Gate Bias Voltage (Vgg1) | -2.0 to 0 Vdc |
Gate Bias Voltage (Vgg2) | (Vdd -8.0) Vdc to Vdd |
RF Input Power (RFin)(Vdd = +8.0 Vdc) | +23 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) |
4.64 W |
Thermal Resistance (channel to die bottom) |
19.4 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain fl atness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifi er applications. The HMC464 amplifi er I/O's are internally matched to 50 Ohms facilitating easy integration into Multi- Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).