Features: Gain: 14 dBNoise Figure: 2.5 dB @ 10 GHzP1dB Output Power: +19 dBm @ 10 GHzSupply Voltage: +5.0V @ 60 mA50 Ohm Matched Input/Output3.15 mm x 1.63 mm x 0.1 mmApplicationThe HMC463 is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & SpaceR...
HMC463: Features: Gain: 14 dBNoise Figure: 2.5 dB @ 10 GHzP1dB Output Power: +19 dBm @ 10 GHzSupply Voltage: +5.0V @ 60 mA50 Ohm Matched Input/Output3.15 mm x 1.63 mm x 0.1 mmApplicationThe HMC463 is ideal ...
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DescriptionThe HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 ...
Features: Pout: -7 dBmPhase Noise: -105 dBc/Hz @100 KHz Typ.No External Resonator NeededSingle Sup...
Drain Bias Voltage (Vdd) | +9.0 Vdc |
Gate Bias Voltage (Vgg1) | -2.0 to 0 Vdc |
Gate Bias Voltage (Vgg2)(AGC) | (Vdd -9.0) Vdc to +2.0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +23 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T= 85 °C) (derate 50 mW/°C above 85 °C) |
4.5 W |
Thermal Resistance (channel to die bottom) |
20 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 14 dB of gain, 2.5 dB noise fi gure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain fl atness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).