HMC461LP3

Features:

·+45 dBm Output IP3 (Balanced Confi guration)
·12 dB Gain
·48% PAE @ +30.5 dBm Pout
·+20 dBm W-CDMA Channel Power @ -45 dBc ACP
·3 x 3 x 1 mm QFN SMT Package


Application

A high linearity 1 watt amplifi er for:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• PHS
• Balanced or Push-Pull Confi gurable


Pinout




Specifications

Collector Bias Voltage (Vcc1, Vcc2)	+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)	+30 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 32 mW/ above 85 )	2.08 W
Thermal Resistance (junction to ground paddle)	31 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC461LP3 is a 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifi er. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be confi gured in a balanced or push-pull amplifi er circuit. The amplifi er provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced confi guration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 makes the HMC461LP3 an ideal driver amplifi er for PCS/3G wireless infrastructure. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifi er IC. The LP3 provides an exposed base for excellent RF and thermal performance.