HMC457QS16G

Features:

·Output IP3: +46 dBm
·Gain: 27 dB @ 1900 MHz
·48% PAE @ +32 dBm Pout
·+25 dBm W-CDMA Channel Power
·@ -50 dBc ACPR
·Integrated Power Control (Vpd)
·QSOP16G SMT Package: 29.4 mm2


Application

The HMC457QS16G is ideal for applications requiring a high dynamic range amplifi er:
• CDMA & W-CDMA
• GSM, GPRS & Edge
• Base Stations & Repeaters


Pinout




Specifications

Collector Bias Voltage (Vcc)	+6.0 Vdc
Control Voltage (Vpd)	+5.4 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 42.9 mW/ above 85)	2.78 W
Thermal Resistance (junction to ground paddle)	23.3/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC457QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifi er operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifi er gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifi er output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE makes the HMC457QS16G an ideal power amplifi er for Cellular/3G base station & repeater applications.