HMC452QS16G

Features:

·Output IP3: +48 dBm
·Gain: 15.5 dB @ 900 MHz
·46% PAE @ +31 dBm Pout
·+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
·Single +5V Supply
·Integrated Power Control (VPD)
·QSOP16G SMT Package: 29.4 mm2


Application

The HMC452QS16G is ideal for applications requiring a high dynamic range amplifi er:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL


Pinout




Specifications

Collector Bias Voltage (Vcc)	+6.0 Vdc
Control Voltage (Vpd1, Vpd2)	+5.3 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)	+35 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 41.5 mW/ above 85)	2.7 W
Thermal Resistance (junction to ground paddle)	24.1/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC452QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifi er operating between 0.45 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifi er gain is typically 15.5 dB from 0.8 to 1.0 GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifi er output IP3 can be optimized to +48 dBm at 0.9 GHz and 1.9 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE makes the HMC452QS16G an ideal power amplifi er for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.