Features: Gain: 26 dB32% PAE @ 28.5 dBm Output Power+40 dBm Output IP3Integrated Power Control (Vpd)Included in the HMC-DK002 Designer's KitApplicationThe HMC450QS16G / HMC450QS16GE is ideal forpower and driver amplifi er applications:• GSM, GPRS, & Edge• CDMA & WCDMA• Ba...
HMC450QS16GE: Features: Gain: 26 dB32% PAE @ 28.5 dBm Output Power+40 dBm Output IP3Integrated Power Control (Vpd)Included in the HMC-DK002 Designer's KitApplicationThe HMC450QS16G / HMC450QS16GE is ideal forpowe...
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DescriptionThe HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 ...
Features: Pout: -7 dBmPhase Noise: -105 dBc/Hz @100 KHz Typ.No External Resonator NeededSingle Sup...
Collector Bias Voltage (Vcc) | +5.5 Vdc |
Control Voltage (Vpd1, Vpd2) | +5.0 Vdc |
RF Input Power (RFin)(Vs = +5.0 Vdc, VPD = +4.0 Vdc) |
+10 dBm |
Junction Temperature | 150 °C |
Continuous Pdiss (T = 85 ) (derate 28 mW/ above 85 ) |
1.86 W |
Thermal Resistance (junction to ground paddle) |
35 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC450QS16G & HMC450QS16GE are high effi ciency GaAs InGaP HBT Medium Power MMIC amplifi ers operating between 800 and 1000 MHz. The amplifi er is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6-2.3 GHz PA. With a minimum of external components, the amplifi er provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5.0V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G & HMC450QS16GE ideal linear drivers for Cellular, PCS & 3G applications.