HMC441

Features: Gain: 15.5 dBSaturated Power: +22 dBm @ 23% PAESingle Supply Voltage:+5.0 V w/ Optional Gate Bias50 Ohm Matched Input/OutputApplicationThe HMC441 is ideal for use as a medium poweramplifi er for:• Point-to-Point Radios• Point-to-Multi-Point Radios• VSAT• LO Driver...

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HMC441 Picture
SeekIC No. : 004364053 Detail

HMC441: Features: Gain: 15.5 dBSaturated Power: +22 dBm @ 23% PAESingle Supply Voltage:+5.0 V w/ Optional Gate Bias50 Ohm Matched Input/OutputApplicationThe HMC441 is ideal for use as a medium poweramplifi ...

floor Price/Ceiling Price

Part Number:
HMC441
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Gain: 15.5 dB
Saturated Power: +22 dBm @ 23% PAE
Single Supply Voltage:
+5.0 V w/ Optional Gate Bias
50 Ohm Matched Input/Output



Application

The HMC441 is ideal for use as a medium power
amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW & ECM



Pinout

  Connection Diagram


Specifications

Drain Bias Voltage (Vdd) +5.5 Vdc
Gate Bias Voltage (Vgg1,Vgg2) -8.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C)
0.9 W
Thermal Resistance
(channel to die bottom)
100 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C



Description

The HMC441 is an effi cient GaAs PHEMT MMIC Medium Power Amplifi er which operates between 6.0 and 18.0 GHz*. The amplifi er provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5.0 V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. The HMC441 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (.99mm2) size. The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation. All data is tested with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

 




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