Features: High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHzPositive Control: 0/+5V51 dBm Input IP3Non-Refl ective DesignMS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G is ideal for:• Basestation Infrastructure• MMDS & 3.5 GHz WLL• CATV/CMTS• Test InstrumentationPinoutSpec...
HMC435MS8G: Features: High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHzPositive Control: 0/+5V51 dBm Input IP3Non-Refl ective DesignMS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G is ideal for:• Basestation...
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DescriptionThe HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 ...
Features: Pout: -7 dBmPhase Noise: -105 dBc/Hz @100 KHz Typ.No External Resonator NeededSingle Sup...
Control Voltage Range | -0.5 to +7.5 Vdc |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
RF Input Power Vctl = 0/+5V | +31 dBm |
The HMC435MS8G is a non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The HMC435MS8G switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.