HMC435MS8G

Features: High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHzPositive Control: 0/+5V51 dBm Input IP3Non-Refl ective DesignMS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G is ideal for:• Basestation Infrastructure• MMDS & 3.5 GHz WLL• CATV/CMTS• Test InstrumentationPinoutSpec...

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SeekIC No. : 004364045 Detail

HMC435MS8G: Features: High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHzPositive Control: 0/+5V51 dBm Input IP3Non-Refl ective DesignMS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G is ideal for:• Basestation...

floor Price/Ceiling Price

Part Number:
HMC435MS8G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

High Isolation: 60 dB @ 1 GHz
                       50 dB @ 2 GHz
Positive Control: 0/+5V
51 dBm Input IP3
Non-Refl ective Design
MS8G SMT Package, 14.8 mm2



Application

The HMC435MS8G is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation



Pinout

  Connection Diagram


Specifications

Control Voltage Range -0.5 to +7.5 Vdc
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
RF Input Power Vctl = 0/+5V +31 dBm



Description

The HMC435MS8G is a non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The  HMC435MS8G  switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.




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