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DescriptionThe HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration a...

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SeekIC No. : 004364033 Detail

HMC429LP4 / HMC429LP4E: DescriptionThe HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering ...

HMC429LP4 / HMC429LP4E Data Sheet

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Part Number:: HMC429LP4 / HMC429LP4E
Supply Ability:: 5000

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1~5000

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Upload time: 2024/6/6

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HMC427LP3 evaluate
Features: High Isolation: 40 ~ 45 dB thru 6 GHzLow Insertion Loss: 1.2 dB@ 6 GHzNon-Refl ective De...
HMC429LP4 evaluate
Features: ·Pout: +4.0 dBm·Phase Noise: -105 dBc/Hz @100 KHz·No External Resonator Needed·Single Su...
HMC430LP4 evaluate
Features: ·Pout: +2 dBm·Phase Noise: -103 dBc/Hz @100 kHz·No External Resonator Needed·Single Supp...

Product Details

Description

Description

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator's monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The HMC429LP4(E) voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.

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