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HMC416LP4 / HMC416LP4E

DescriptionThe HMC416LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.75 to 3.0 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration and ...

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HMC416LP4 / HMC416LP4E: DescriptionThe HMC416LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.7...

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Part Number:
HMC416LP4 / HMC416LP4E
Supply Ability:
5000

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  • 1~5000
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Description



Description

The HMC416LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.75 to 3.0 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator's monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 37 mA. The HMC416LP4(E) voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.




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