HMC415LP3

The HMC415LP3 is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 4.9 and 5.9 GHz. The amplifi er is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3.0V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.