HMC414MS8G

Features:

·Gain: 20 dB
·Saturated Power: +30 dBm
·32% PAE
·Supply Voltage: +2.75V to +5.0 V
·Power Down Capability
·Low External Part Count


Application

This amplifi er is ideal for use as a power amplifi er for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS


Pinout




Specifications

Collector Bias Voltage (Vcc)	+5.5 Vdc
Control Voltage (Vpd1, Vpd2)	+4.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc, Vpd = +3.6 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 27 mW/ above 85)	1.755 W
Thermal Resistance (junction to ground paddle)	37/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC414MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 2.2 and 2.8 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5.0V supply voltage. The HMC414MS8G amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.