HMC407MS8GE

Series: -
Test Frequency: -
Packaging: Cut Tape (CT)Alternate Packaging
Current - Supply: 230mA
Gain: 15dB
P1dB: 25dBm
Voltage - Supply: 5V
RF Type: General Purpose
Noise Figure: 5.5dB
Manufacturer: Hittite Microwave Corporation
Frequency: 5GHz ~ 7GHz
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad


Features:

·Gain: 15 dB
·Saturated Power: +29 dBm
·28% PAE
·Supply Voltage: +5.0 V
·Power Down Capability
·No External Matching Required


Application

This amplifi er is ideal for use as a power amplifi er for 5.0 - 7.0 GHz applications:
• UNII
• HiperLAN


Pinout




Specifications

Collector Bias Voltage (Vcc1, Vcc2)	+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)	+5.5 Vdc
Junction Temperature	+20 dBm
Continuous Pdiss (T = 85 ) (derate 31 mW/ above 85 )	150
Thermal Resistance (junction to lead)	2W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC407MS8G & HMC407MS8GE are high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 5 and 7 GHz. The HMC407MS8G & HMC407MS8GE  amplifi er requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifi er provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.