HMC407MS8G

The HMC407MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 5 and 7 GHz. The amplifi er requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The HMC407MS8G amplifi er provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.