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HMC406MS8GE

Features: Gain: 17 dBSaturated Power: +29 dBm38% PAESupply Voltage: +5.0 VPower Down CapabilityLow External Part CountApplicationThis amplifi er is ideal for use as a driver amplifi er for 5.0 - 6.0 GHz applications:• UNII• HiperLAN & 802.11a WLANPinoutSpecifications Collector...

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SeekIC No. : 004364005 Detail

HMC406MS8GE: Features: Gain: 17 dBSaturated Power: +29 dBm38% PAESupply Voltage: +5.0 VPower Down CapabilityLow External Part CountApplicationThis amplifi er is ideal for use as a driver amplifi er for 5.0 - 6.0...

HMC406MS8GE Data Sheet

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Part Number:
HMC406MS8GE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count


Application

This amplifi er is ideal for use as a driver amplifi er for 5.0 - 6.0 GHz applications:
• UNII
• HiperLAN & 802.11a WLAN


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc)

Control Voltage (Vpd)

RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)

Junction Temperature
Continuous Pdiss (T = 85 )
(derate 32 mW/°C above 85 )

Thermal Resistance
(junction to ground paddle)

Storage Temperature

Operating Temperature		 +5.5 Vdc

+5.5 Vdc

+20 dBm

150

2.1 W

31 /W

-65 to +150

-40 to +85



Description

The HMC406MS8G & HMC406MS8GE are high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 5.0 and 6.0 GHz. The HMC406MS8G & HMC406MS8GE  amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5.0V supply voltage. Vpd can be used for full power down or RF output power/current control.




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