Features: Isolation: 44 dB @ 2.0 GHz 31 dB @ 6.0 GHzInsertion Loss: 1.5 dB Typical @ 4.0 GHzNon-Refl ective DesignHermetic Surface Mount PackageApplicationThe HMC233G8 is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military Radios, Radar & ECM• Space...
HMC233G8: Features: Isolation: 44 dB @ 2.0 GHz 31 dB @ 6.0 GHzInsertion Loss: 1.5 dB Typical @ 4.0 GHzNon-Refl ective DesignHermetic Surface Mount PackageApplicationThe HMC233G8 is ideal for:• Telecom I...
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RF Input Power (Vctl= -5V) (0.5 - 6 GHz) |
+30 dBm (@ +85 °C) |
Control Voltage Range (A & B) | +1.0V to -7.5 Vdc |
Hot Switch Power Level | +27 dBm |
Channel Temperature | 150 |
Continuous Pdiss (T = 85 °C) (derate 4 mW/°C above 85 °C) |
0.25 W |
Thermal Resistance (Insertion Loss Path) |
148 °C/W |
Thermal Resistance (Terminated Path) |
260 °C/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC233G8 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >44 dB isolation up to 2 GHz and >31 dB isolation up to 6.0 GHz. The HMC233G8 switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.