Features: • Excellent hFE Linearity• High DC Current Gain• High Power DissipationSpecifications• Maximum TemperaturesStorage Temperature .................................................................................... -55 ~ +150 Junction Temperature .......................
HMBT28S: Features: • Excellent hFE Linearity• High DC Current Gain• High Power DissipationSpecifications• Maximum TemperaturesStorage Temperature ........................................
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The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications