Features: ` Single 3 V power supply (2.7 V to 3.6 V)` Fully synchronous operation - 150 ns Read access - 235 ns Read/write cycle time - 1012 Read/write cycle endurance` Low power consumption - Active: 20 mA (typ) - Standby: 15 A (typ)` JEDEC standard 21-C write protection (Entire memory) and Selec...
HM71V832: Features: ` Single 3 V power supply (2.7 V to 3.6 V)` Fully synchronous operation - 150 ns Read access - 235 ns Read/write cycle time - 1012 Read/write cycle endurance` Low power consumption - Activ...
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Parameter |
Symbol |
Value |
Unit |
Power supply voltage |
Vcc |
-0.5 to +5.0 |
V |
Voltage on any pin relative to Vss |
VT |
-0.5 to +5.0 |
V |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
-55 to +85 |
°C |
The HM71V832 is a ferroelectric RAM, or FARM® memory, organized as 32k-word x 8-bit. FRAM® memory products from Hitachi combine the read/write characteristics of semiconductor RAM with nonvolatile storage. This product is manufactured in a 0.8 micron silicon gate CMOS technology with the addition of integrated thin film ferroelectric storage cells developed. The ferroelectric cells are polarized on each read or write cycle, therefore no special store or recall sequence is required. The memory is always static and nonvolatile. Hitachi's FRAMÒ products operate from a single 3 V power supply and are CMOS compatible on all inputs and outputs. The HM71V832 utilizes the JEDEC standard bytewide SRAM pinout.