Features: • 3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage• Clock frequency: 250/166 MHz• Fast clock access time: 2.6/3.5 ns (max)• Low operating current: 250/200 mA (max)• Address data pipeline capability• Internal input registers (Address, Data,...
HM66WP18512: Features: • 3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage• Clock frequency: 250/166 MHz• Fast clock access time: 2.6/3.5 ns (max)• Low operating current: 250/...
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Parameter |
Symbol |
Value |
Unit | |
Supply voltage |
VDD |
0.5 to +4.6 |
V | |
Voltage on any pins relative to VSS Except VDD |
DQ) |
VT |
0.5 to VDDQ + 0.5 |
V |
(Others) |
VT |
0.5 to VDD + 0.5 |
V | |
Power dissipation |
PT |
1.6 |
W | |
Operating temperature |
Topr |
0 to +70 |
°C | |
Storage temperature range (with bias) |
Tstg (bias) |
10 to +85 |
°C | |
Storage temperature range |
Tstg |
55 to +125 |
°C |
The HM66WP18512 is a synchronous fast static RAM organized as 512-Kword × 18-bit. The HM66WP36256 is a synchronous fast static RAM organized as 256-Kword × 36-bit. HM66WP18512 has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 100- pin LQFP.
Note of HM66WP18512: All power supply (VDD, VDDQ) and ground (VSS) pins must be connected for proper operation of the device. ZBL: Zero Bus Latency and compatible ZBTTM SRAM. ZBTTM is trademark of Integrated Device Technology, Inc.,