HLX6256

The HLX6256 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access  memory with industry-standard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments. The HLX6256 RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. The HLX6256 RAM is compatible with JEDEC standard low voltage CMOS I/O. Power consumption is typically less than 10 mW/MHz in operation, and less than 2 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 3.3 V.

Honeywell's enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV low power process is a SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.7 m (0.55 m effective gate length-Leff). Additional features include tungsten via plugs, Honeywell's proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell in HLX6256 is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.