HLB120A

DescriptionThe HLB120A is a kind of NPN triple diffused planar type high voltage transistor which is made by the MICROELECTRONICS CORP. It is a medium power transistor designed for use in switching applications. There are some features of HLB120A as follows. (1) high breakdown voltage; (2) low co...

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SeekIC No. : 004362987 Detail

HLB120A: DescriptionThe HLB120A is a kind of NPN triple diffused planar type high voltage transistor which is made by the MICROELECTRONICS CORP. It is a medium power transistor designed for use in switching ...

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Part Number:
HLB120A
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
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Upload time: 2024/11/21

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Description



Description

The HLB120A is a kind of NPN triple diffused planar type high voltage transistor which is made by the MICROELECTRONICS CORP. It is a medium power transistor designed for use in switching applications.

There are some features of HLB120A as follows. (1) high breakdown voltage; (2) low collector saturation voltage; (3) fast switching speed.

The following is the description about its absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 and is 7 W at TC is 25 ; (3): collector to base voltage(VCBO) is 600 V and collector to emitter voltage(VCEO) is 400 V,emitter to base voltage(VEBO) is 6 V; (4): IC collector current for DC is 100 mA and is 200 mA for pulse; (5): the minimum BVCBO is 600 V when IC is 100 A and IE is 0 ; (6): the minimum BVCEO is 400 V when IC is 10 mA and IB is 0,and BVEBO is 6 V at IE is 10 A and IE is 0; (7): the maximum ICBO is 10 A when VCB is 550 V ,IEBO is 10 A at VEB is 6 V and IC is 0,ICEO is 10 A at VCE is 400 V and IC is 0 ; (8): the maximum VCE(sat) is 400 mV at the condition of IC is 50 mA and IB is 10 mA. If you want to know more information about the HLB120A ,please download the datasheet at www.seekic.com.




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