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HIRF740

Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter Value Units VDSS Drain-Source Voltage 400 V ID Drain to Current (Continuou...

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SeekIC No. : 004362816 Detail

HIRF740: Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter ...

HIRF740 Data Sheet

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Part Number:
HIRF740
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/10

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Product Details

Description



Features:

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements


Specifications

Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
400
V
ID
Drain to Current (Continuous)(VGS@10V, TC=25)
10
A
Drain to Current (Continuous)(VGS@10V, TC=100)
6.3
A
IDM
Drain to Current (Pulsed) *1
40
A
VGS
Gate-to-Source Voltage (Continue)
±20
V
PD
Total Power Dissipation
W
TO-220AB
74
TO-220FP
38
Derate above 25°C
W/
TO-220AB
0.59
TO-220FP
0.3
EAS
Single Pulse Avalanche Energy *2
520
mJ
IAR
Avalanche Current *1
10
A
EAR
Repetitive Avalanche Energy*1
13
mJ
dv/dt
Peak Diode Recovery *3
4
V/ns
TJ,Tstg
Operating Junction and Storage Temperature Range
-55 to 150
TL
Maximum Lead Temperature for Soldering Purposes, 1.6mm from
case for 10 seconds
300
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25, L=9.1mH, RG=25, IAS=10A
*3: ISD10A, di/dt120A/us, VDDV(BR)DSS, TJ150


Description

This HIRF740 N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.




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