Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter Value Units VDSS Drain-Source Voltage 400 V ID Drain to Current (Continuou...
HIRF740: Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter ...
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Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-Source Voltage |
400 |
V |
ID |
Drain to Current (Continuous)(VGS@10V, TC=25) |
10 |
A |
Drain to Current (Continuous)(VGS@10V, TC=100) |
6.3 |
A | |
IDM |
Drain to Current (Pulsed) *1 |
40 |
A |
VGS |
Gate-to-Source Voltage (Continue) |
±20 |
V |
PD |
Total Power Dissipation |
W | |
TO-220AB |
74 | ||
TO-220FP |
38 | ||
Derate above 25°C |
W/ | ||
TO-220AB |
0.59 | ||
TO-220FP |
0.3 | ||
EAS |
Single Pulse Avalanche Energy *2 |
520 |
mJ |
IAR |
Avalanche Current *1 |
10 |
A |
EAR |
Repetitive Avalanche Energy*1 |
13 |
mJ |
dv/dt |
Peak Diode Recovery *3 |
4 |
V/ns |
TJ,Tstg |
Operating Junction and Storage Temperature Range |
-55 to 150 |
|
TL |
Maximum Lead Temperature for Soldering Purposes, 1.6mm from case for 10 seconds |
300 |
This HIRF740 N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.