HIR333C/H0

Wavelength :
Beam Angle :
Radiant Intensity :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging : Bulk


Features:

`High reliability
`High radiant intensity
`Peak wavelength p=850nm
`2.54mm Lead spacing
`Low forward voltage
`Pb free
`The product itself will remain within RoHS compliant version.


Application

·Free air transmission system
·Optoelectronic switch
·Floppy disk drive
·Infrared applied system 
·Smoke detector


Specifications

Parameter	Symbol	Rating	Units
Continuous Forward Current	IF	100	mA
Peak Forward Current	IFP	1.0	mA
Reverse Voltage	VR	5	V
Operating Temperature	Topr	-40 ~ +85
Storage Temperature	Tstg	-40 ~ +85
Soldering Temperature	Tsol	260
Power Dissipation at(or below) 25 Free Air Temperature	Pd	150	mW

Notes: *1:I_FP Conditions--Pulse Width100s and Duty1%. 
   *2:Soldering time5 seconds.


Description

·EVERLIGHT'S Infrared Emitting Diode(HIR333C/H0)is a high intensity diode , molded in a water clear plastic package.
·The HIR333C/H0 is spectrally matched with phototransistor , photodiode and infrared receiver module.