HIP6602B

Features:

* Drives Four N-Channel MOSFETs
* Adaptive Shoot-Through Protection
* Internal Bootstrap Devices
* Supports High Switching Frequency Fast Output Rise Time Propagation Delay 30ns
* Small 14-Lead SOIC Package
* Smaller 16-Lead QFN Thermally Enhanced Package
* 5V to 12V Gate-Drive Voltages for Optimal Efficiency
* Three-State Input for Bridge Shutdown
* Supply Undervoltage Protection
* Pb-Free Plus Anneal Available (RoHS Compliant)
* QFN Package: Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline Near Chip Scale sackage footprint, which improves PCB efficiency and has a thinner profile




Application

* Core Voltage Supplies for Intel Pentium(R) IIIand AMD@
Athlon^TM Microprocessors.
* High-Frequency, Low-Profile DC/DC Converters
* High-Current, Low-Voltage DC/DC Converters




Pinout






Specifications

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC). . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V_BOOT - V _PHASE) . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V_PWM) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . .V_PHASE - 5V(<400ns pulse width) to V_BOOT + 0.3V
V_PHASE -0.3V(>400ns pulse width) to V_BOOT + 0.3V
LGATE. . . . . . . . . GND - 5V(<400ns pulse width) to V_PVCC + 0.3V
GND -0.3V(>400ns pulse width) to V_PVCC + 0.3V
PHASE. . . . . . . . . . . . . . . . . . GND -5V(<400ns pulse width) to 15V
GND -0.3V(>400ns pulse width) to 15V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V




Description

The HIP6602B is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous rectified buck converter topology. This device is available in either a 14-lead SOIC or a 16-lead QFN package with a PAD to thermally enhance the package. These drivers combined with a HIP63xx or ISL65xx series of Multiphase Buck PWM controllers and MOSFETs form a complete core voltage regulator solution for advanced microprocessors. The HIP6602B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses. The output drivers in the HIP6602B have the capacity to efficiently switch power MOSFETs at high frequencies. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. This device implements bootstrapping on the upper gates with a single external capacitor and resistor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.