HI1609-D

The HI1609-D belongs to the HI1609 series. HI1609-D is a kind of NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It can be used for low frequency voltage amplifier. It is a complementary pair with HI1109.

The following is the description about HI1609-D's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 20 W when TC is 25 ; (3): collector to base voltage(VCBO) is 160 V and collector to emitter voltage(VCEO) is 160 V,emitter to base voltage(VEBO) is 5 V; (4): IC collector current for DC is 100 mA ; (5): the minimum BVCBO is 160 V when IC is 10 A and IE is 0 ; (6): the minimum BVCEO is 160 V when IC is 1 mA and IB is 0,and BVEBO is 5 V at IE is 10 A and IC is 0; (7): the maximum ICBO is 10 A when VCB is 140 V and IE is 0; (8): the maximum VCE(sat) is 2 V at the condition of IC is 30 mA and IB is 3 mA; (9): the typical fT is 140 MHz when VCE is 5 V and IC is 10 mA.

If you want to know more information about the HI1609-D ,please download the datasheet at www.seekic.com.