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HGTA32N60E2

Features: • 32A, 600V• Latch Free Operation• Typical Fall Time 620ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 VCollec...

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SeekIC No. : 004362126 Detail

HGTA32N60E2: Features: • 32A, 600V• Latch Free Operation• Typical Fall Time 620ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . ....

HGTA32N60E2 Data Sheet

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Part Number:
HGTA32N60E2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR 600 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 50 A
Collector Current Continuous at VGE = 15V at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . IC90 32 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Sage Operating Area TJ = +150 . . . . . . . . . . . . . . . . . . . . . .  .SSOA 200A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  tSC 3 ms
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 ms


Description

The HGTA32N60E2 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

HGTA32N60E2 IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.




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