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HGT4E30N60B3DS

Features: • 60A, 600V, TC =25oC• 600V Switching SOA Capability• TypicalFallTime.................90nsatTJ =150oC• Short Circuit Rating• Low Conduction Loss• Hyperfast Anti-Parallel DiodeSpecificationsCollectortoEmitterVoltage.........................................

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HGT4E30N60B3DS: Features: • 60A, 600V, TC =25oC• 600V Switching SOA Capability• TypicalFallTime.................90nsatTJ =150oC• Short Circuit Rating• Low Conduction Loss• Hyperf...

HGT4E30N60B3DS Data Sheet

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Part Number:
HGT4E30N60B3DS
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

• 60A, 600V, TC =25oC
• 600V Switching SOA Capability
• TypicalFallTime.................90nsatTJ =150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Specifications

CollectortoEmitterVoltage......................................................BVCES
Collector Current Continuous
At TC =25oC.............................................................................IC25
At TC =110oC..........................................................................IC110
Average Diode Forward Current at 11............................... IEC(AVG)
CollectorCurrentPulsed(Note1) ................................................. ICM
GatetoEmitterVoltageContinuous.............................................VGES
GatetoEmitterVoltagePulsed................................................... VGEM
Switching Safe Operating Area at TJ =150oC(Figure2)............ SSOA
Power Dissipation Total at TC =25oC...........................................PD
Power Dissipation Derating TC >25oC..........................................
OperatingandStorageJunctionTemperatureRange.................TJ,TSTG
MaximumLeadTemperatureforSoldering........................................ TL
Short Circuit Withstand Time (Note 2) at VGE =12V.....................tSC
Short Circuit Withstand Time (Note 2) at VGE =10V.....................tSC


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