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HFP50N06

Features: ` Originative New Design` Superior Avalanche Rugged Technology` Robust Gate Oxide Technology` Very Low Intrinsic Capacitances` Excellent Switching Characteristics` Unrivalled Gate Charge : 40 nC (Typ.)` Extended Safe Operating Area` Lower R DS(ON) : 0.018 (Typ.) @VGS=10VSpecifications ...

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SeekIC No. : 004361996 Detail

HFP50N06: Features: ` Originative New Design` Superior Avalanche Rugged Technology` Robust Gate Oxide Technology` Very Low Intrinsic Capacitances` Excellent Switching Characteristics` Unrivalled Gate Charge :...

HFP50N06 Data Sheet

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Part Number:
HFP50N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Description



Features:

` Originative New Design
` Superior Avalanche Rugged Technology
` Robust Gate Oxide Technology
` Very Low Intrinsic Capacitances
` Excellent Switching Characteristics
` Unrivalled Gate Charge : 40 nC (Typ.)
` Extended Safe Operating Area
` Lower R DS(ON) : 0.018 (Typ.) @VGS=10V


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
60
V
ID
 Drain Current Continuous (TC = 25)
50
A
Drain Current Continuous (TC = 100)
35.4
A
IDM
 Drain Current Pulsed                     (Note 1)
200
A
VGS
 Gate-Source Voltage
±25
V
EAS
 Single Pulsed Avalanche Energy        (Note 2)
490
mJ
IAR
 Avalanche Current                           (Note 1)
50
A
EAR
 Repetitive Avalanche Energy            (Note 1)
12
mJ
dv/dt
 Peak Diode Recovery dv/dt              (Note 3)
7.0
V/ns
PD
 Power Dissipation (TC = 25)
                              - Derate above 25
120
W
0.8
W/
TJ,TSTG
 Operating and Storage Temperature Range
-55 to +175
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



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