Diodes (General Purpose, Power, Switching) Hi Eff Si Rect SMA,1A,300V,50ns.GP
HFM104: Diodes (General Purpose, Power, Switching) Hi Eff Si Rect SMA,1A,300V,50ns.GP
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Packaging : | Reel |
PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
Forward rectified current | Ambient temperature = 50 | IO | 1.0 | A | ||
Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) |
IFSM | 30 | A | ||
Reverse current | VR = VRRM TA = 25 | IR | 5.0 | uA | ||
VR = VRRM TA = 100 | 150 | uA | ||||
Thermal resistance | Junction to ambient | RJA | 32 | / w | ||
Diode junction capacitance | f=1MHz and applied 4vDC reverse voltage | CJ | 20 | pF | ||
Storage temperature | TSTG | -55 | +150 |