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HFB50HI20

Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• HermeticSpecifications Parameter Max. Units VR D.C. Reverse VoltageTC = 87°C 200 V IF(AV) Continuous Forward Current TC =...

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SeekIC No. : 004361812 Detail

HFB50HI20: Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• HermeticSpecifications Parameter Max. Units VR D.C....

HFB50HI20 Data Sheet

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Part Number:
HFB50HI20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic




Specifications

 Parameter
Max.
Units
VR
 D.C. Reverse VoltageTC = 87°C
200
V
IF(AV)
 Continuous Forward Current TC = 25°C
50
A
IFSM
 Single Pulse Forward Current ‚
450
PD @ TC = 25°C
 Maximum Power Dissipation
167
W
TJ,TSTG
 Operating Junction andStorage Temperature Range
-55 to +150
°C





Description

These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current,temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFB50HI20 devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.






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