HFB35HB20

HEXFREDTM HFB35HB20 diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.

The HFB35HB20 has four features.The first one is reduced RFI and EMI.The second one is reduced snubbing.The third one is extensive characterization of recovery parameters.The fourth one is hermetic.

HEXFRED HFB35HB20 diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.

The HFB35HB20 has some absolute maximum ratings.When parameter is cathode-to-anode voltage,the symbol is VR,the Max.is 200,the units is V.When parameter is continuous forward current,TC = 80,the symbol is IF(AV),the Max.is 35,the units is A.When parameter is single pulse forward current,Tc=25,the symbol is IFSM,the Max.is 150,the units is A.When parameter is maximum power dissipation,the symbol is PD @ TC = 25,the Max.is 125,the units is W.When parameter is operating junction and storage temperature range,the symbol is TJ,TSTG,the Max.is -55 to +150,the units is .