HFB20HJ20C

Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• Hermetic• Surface MountPinoutSpecifications Parameter Max Units VR Cathode to Anode Voltage ( Per Leg ) 200 V IF(AV) Continuous Forward Current, TC...

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SeekIC No. : 004361806 Detail

HFB20HJ20C: Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• Hermetic• Surface MountPinoutSpecifications Parameter Max ...

floor Price/Ceiling Price

Part Number:
HFB20HJ20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount





Pinout

  Connection Diagram




Specifications

Parameter Max Units
VR Cathode to Anode Voltage ( Per Leg ) 200 V
IF(AV) Continuous Forward Current, TC = 85°C 20 A
IFSM Single Pulse Forward Current, TC = 25°C ( Per Leg) 125
PD @ TC = 25°C Maximum Power Dissipation 28 V
TJ,TSTG Operating Junction and Storage Temperature Range -55 to +150 °C





Description

HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.  The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.




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