Manufacturer: Vishay Semiconductors
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Packaging: Bulk
Diode Configuration: Single
Series: HEXFRED®
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Current - Average Rectified (Io) (per Diode): 90A
Reverse Recovery Time (trr): 140ns
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A
Current - Reverse Leakage @ Vr: 6µA @ 400V
Features: Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery ParametersSpecifications
|
|
Parameter |
Max. |
Units |
|
VR |
Cathode-to-Anode Voltage |
400 |
V |
|
IF @ TC = 25°C |
Continuous Forward Current |
148 |
A |
|
IF @ TC = 100°C |
Continuous Forward Current |
72 |
|
IFSM |
Single Pulse Forward Current |
600 |
|
EAS |
Non-Repetitive Avalanche Energy |
1.4 |
µJ |
|
PD @ TC = 25°C |
Maximum Power Dissipation |
260 |
W |
|
PD @ TC = 100°C |
Maximum Power Dissipation |
104 |
|
TJ |
Operating Junction and |
-55 to +150
|
°C |
|
TSTG |
Storage Temperature Range |
DescriptionHFA90NH40R diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA90NH40R devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFA90NH40R Data Sheet
