DIODE HEXFRED 600V 50A TO-249AA
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Features: • Fast recovery time characteristic• Electrically isolated base plate•...
Features: • Fast recovery time characteristic• Electrically isolated base plate•...
Series: | HEXFRED® | Manufacturer: | Vishay Semiconductors | ||
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 30A | Current - Reverse Leakage @ Vr: | 10µA @ 600V | ||
Maximum Clock Frequency : | 33 MHz | Current - Average Rectified (Io) (per Diode): | 50A (DC) | ||
Voltage - DC Reverse (Vr) (Max): | 600V | Reverse Recovery Time (trr): | 100ns | ||
Diode Type: | Standard | Speed: | Fast Recovery = 200mA (Io) | ||
Diode Configuration: | 1 Pair Common Cathode | Mounting Type: | Chassis Mount | ||
Package / Case: | TO-249AA (Modified), D-60 | Supplier Device Package: | TO-249AA |
Parameter |
Max. |
Units | |
VR |
Cathode-to-Anode Voltage |
600 |
V |
IF @ TC = 25°C |
Continuous Forward Current |
50 |
A |
IF @ TC = 100°C |
Continuous Forward Current |
24 | |
IFSM |
Single Pulse Forward Current |
200 | |
EAS |
Non-Repetitive Avalanche Energy |
220 |
µJ |
PD @ TC = 25°C |
Maximum Power Dissipation |
125 |
W |
PD @ TC = 100°C |
Maximum Power Dissipation |
50 | |
TJ |
Operating Junction and |
-55 to +150 |
°C |
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.