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HFA45HC60C

Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• HermeticSpecifications Parameter Max. Units VR Cathode to Anode Voltage 600 V IF(AV) Continuous Forward Current, TC = 80°C 45 A IFSM Single Pulse F...

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HFA45HC60C: Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• HermeticSpecifications Parameter Max. Units VR Cathode to A...

HFA45HC60C Data Sheet

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Part Number:
HFA45HC60C
Supply Ability:
5000

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Product Details

Description



Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic




Specifications

Parameter Max. Units
VR Cathode to Anode Voltage 600 V
IF(AV) Continuous Forward Current, TC = 80°C 45 A
IFSM Single Pulse Forward Current, TC = 25°C 225
PD @ TC = 25°C Maximum Power Dissipation 104 W
TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 °C





Description

HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.






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