HFA35HB60

Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Electrically Isolated
• Ceramic Eyelets




Specifications

	Parameter	Max.	Units
VR	D.C. Reverse Voltage	600	V
IF @ TC = 100°C	Continuous Forward Current 	22	A
IFSM @ TC = 25°C	Single Pulse Forward Current ‚	225
PD @ TC = 25°C	Maximum Power Dissipation	83	W
TJ	Operating Junction and	-55 to +150	°C
TSTG	Storage Temperature Range

Description

HEXFREDTM HFA35HB60 diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA35HB60 devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.