Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• Hermetic• Electrically Isolated• Ceramic EyeletsSpecifications Parameter Max. Units VR D.C. Reverse Voltage 1200 V I...
HFA35HB120C: Features: • Reduced RFI and EMI• Reduced Snubbing• Extensive Characterization of Recovery Parameters• Hermetic• Electrically Isolated• Ceramic EyeletsSpecificatio...
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Parameter |
Max. |
Units | |
VR |
D.C. Reverse Voltage |
1200 |
V |
IF @ TC = 100°C |
Continuous Forward Current |
15 |
A |
IFSM @ TC = 25°C |
Single Pulse Forward Current ‚ |
130 | |
PD @ TC = 25°C |
Maximum Power Dissipation |
63 |
W |
TJ |
Operating Junction and |
-55 to +150 |
°C |
TSTG |
Storage Temperature Range |
HEXFREDTM HFA35HB120C diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA35HB120C devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.