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HFA320NJ40CPbF

Features: • Very low Qrr and trr• Lead (Pb)-free• Designed and qualified for industrial levelSpecifications PARAMETER TEST CONDITION SYMBOL MAX. UNIT Emitter to Base Voltage VR 400 V Collector Current TC = 25 TC = 85 TC = 115 IF 420255160...

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HFA320NJ40CPbF: Features: • Very low Qrr and trr• Lead (Pb)-free• Designed and qualified for industrial levelSpecifications PARAMETER TEST CONDITION SYMBOL MAX. UNIT Emitter to...

HFA320NJ40CPbF Data Sheet

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Part Number:
HFA320NJ40CPbF
Supply Ability:
5000

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Product Details

Description



Features:

• Very low Qrr and trr
• Lead (Pb)-free
• Designed and qualified for industrial level


Specifications

PARAMETER
 TEST CONDITION
SYMBOL
MAX.
UNIT
Emitter to Base Voltage  
VR
400
V
Collector Current TC = 25

TC = 85

TC = 115
IF
420

255

160
A
Surge forward current Limited by junction temperature
IFSM
1200
Non-repetitive avalanche energy L = 100 H, duty cycle limited by maximum TJ
EAS
1.4
mJ
Maximum power dissipation TC = 25

TC = 100
PD
625

250
W
Operating junction and storage
temperature range		  
TJ,Tstg
- 55 to 150



Description

HEXFRED® HFA320NJ40CPbF diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA320NJ40CPbF devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.




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