HFA3135

Features:

• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . .100
• NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . .57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6




Application

• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors




Pinout






Specifications

Collector to Emitter Voltage (RB 10kΩ to GND) . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . ..14mA at T_J =150
Collector Current . . . . . . . . . . . . . . . . . . . . ..26mA at T_J =125
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..400V
(Per MIL-STD-883 Method 3015.7)




Description

The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporations complementary bipolar UHF-1X process. The HFA3134 and HFA3135 NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.