HFA3128

Features: • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V• PNP Transistor (fT) . . . . . . . . ....

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HFA3128 Picture
SeekIC No. : 004361739 Detail

HFA3128: Features: • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130• NPN Early Voltage...

floor Price/Ceiling Price

Part Number:
HFA3128
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/20

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Product Details

Description



Features:

• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50W) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series Arrays





Specifications

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . ..12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . .5.5V
Collector Current (100% Duty Cycle) . .18.5mA at TJ = 150
Collector Current (100% Duty Cycle) . . . 34mA at TJ = 125
3Collector Current (100% Duty Cycle) . . . 7mA at TJ = 110
Peak Collector Current (Any Condition) . . . . . . . . . . . ..65mA





Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

TheHFA3046, HFA3096, HFA3127 and the HFA3128  are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPNPNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

For PSPICE models, please request AnswerFAX document number 663046. Intersil also provides an Application Note illustrating the use of these HFA3046, HFA3096, HFA3127 and the HFA3128  as RF amplifiers (request AnswerFAX document 99315).




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