HFA3127

Pinout






Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 8.0V
Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .12.0V
Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Collector Current at 100% Duty Cycle, 175 TJ . . . . . . . .11.3mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 to 150
Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . . . . +175
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . +300
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V




Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporations complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making HFA3046, HFA3096, HFA3127 and the HFA3128  ideal for high frequency amplifier and mixer applications. The HFA3046, HFA3096, HFA3127 and the HFA3128  are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.