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HFA3102

Features: • High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz• High Power Gain-Bandwidth Product . . . . . . . . . . . . 5GHz• High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70• Noise Figure (Transistor) . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004361737 Detail

HFA3102: Features: • High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz• High Power Gain-Bandwidth Product . . . . . . . . . . . . 5GHz• High Current Gain (hFE) . . . . . . . ...

HFA3102 Data Sheet

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Part Number:
HFA3102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz
• High Power Gain-Bandwidth Product . . . . . . . . . . . . 5GHz
• High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70
• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB
• Low Collector Leakage Current . . . . . . . . . . . . . <0.01nA
• Excellent hFE and VBE Matching
• Pin-to-Pin to UPA102G




Application

• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
• Wireless Communication Systems
• Radio and Satellite Communications
• Fiber Optic Signal Processing
• High Performance Instrumentation




Pinout

Connection Diagram




Specifications

VCEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . 8.0V
VCBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . 12.0V
VEBO Emitterr to Base Voltage . . . . . . . . . . . . . . . . . . . . . 12.0V
IC, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30mA




Description

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents of HFA3102 are maintained to under 0.01nA.




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