HFA3101

Features:

•Pb-free Available as an Option
•High Gain Bandwidth Product (f_T) . . . . . . . . . . . . . 10GHz
•High Power Gain Bandwidth Product. . . . . . . . . . . . 5GHz
•Current Gain (h_FE). . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
•Low Noise Figure (Transistor) . . . . . . . . . . . . . . . . . 3.5dB
•Excellent hFE and VBE Matching
•Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA
•Pin to Pin Compatible to UPA101




Application

•Balanced Mixers
•Multipliers
•Demodulators/Modulators
•Automatic Gain Control Circuits
•Phase Detectors
•Fiber Optic Signal Processing
•Wireless Communication Systems
•Wide Band Amplification Stages
•Radio and Satellite Communications
•High Performance Instrumentation




Pinout






Specifications

V_CEO, Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
V_CBO, Collector to Base Voltage. . . . . . . . . . . . . . . . . . . . . . . 12.0V
V_EBO, Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
I_C, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30mA




Description

The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersils bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, makingHFA3101 ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.