HFA3096

Features:

• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50W) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series Arrays




Application

• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors




Pinout






Specifications

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . ..12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . .5.5V
Collector Current (100% Duty Cycle) . .18.5mA at T_J = 150
Collector Current (100% Duty Cycle) . . . 34mA at T_J = 125
3Collector Current (100% Duty Cycle) . . . 7mA at T_J = 110
Peak Collector Current (Any Condition) . . . . . . . . . . . ..65mA




Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporations complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046, HFA3096, HFA3127 and the HFA3128 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.