HFA180NH40R

Features:

·Reduced RFI and EMI
·Reduced Snubbing
·Extensive Characterization of
·Recovery Parameters


Pinout




Specifications

	Parameters	Max	Units
VR	Cathode-to-Anode Voltage	400	V
IF @ TC = 25°C	Continuous Forward Current	280	A
IF @ TC = 100°C	Continuous Forward Current	138	A
IFSM	Single Pulse Forward Current	1200	A
EAS	Non-Repetitive Avalanche Energy	1.4	mJ
PD @ TC = 25°C	Maximum Power Dissipation	521	W
PD @ TC = 100°C	Maximum Power Dissipation	208	W
TJ, TSTG	Operating Junction and Storage Temperatures	- 55 to 150	°C

Description

HEXFREDTM HFA180NH40R diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.

The softness of the recovery eliminates the need for a snubber in most applications. These HFA180NH40R devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.