Manufacturer: Vishay Semiconductors
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Packaging: Bulk
Diode Configuration: Single
Reverse Recovery Time (trr): 120ns
Series: HEXFRED®
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 135A
Current - Reverse Leakage @ Vr: 9µA @ 400V
Current - Average Rectified (Io) (per Diode): 135A
Features: •Reduced RFI and EMI
•Reduced Snubbing
•Extensive Characterization of Recovery ParametersSpecifications
|
Parameter |
Max |
Units |
| VR |
Cathode-to-Anode Voltage |
400 |
V |
| IF @ TC = 25°C |
Continuous Forward Current |
244 |
A |
| IF @ TC = 100°C |
Continuous Forward Current |
122 |
| IFSM |
Single Pulse Forward Current |
900 |
| EAS |
Non-Repetitive Avalanche Energy |
1.4 |
µJ |
| PD @ TC = 25°C |
Maximum Power Dissipation |
460 |
W |
| PD @ TC = 100°C |
Maximum Power Dissipation |
185 |
TJ
TSTG
|
Operating Junction and
Storage Temperature Range |
-55 to +150 |
C |
DescriptionHFA135NH40 HEXFRED™ diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA135NH40 devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFA135NH40 Data Sheet
