Features: • Fast recovery time characteristic• Electrically isolated base plate• Large creepage distance between terminal• Simplified mechanical designs, rapid assembly• UL pending• Totally lead (Pb)-free• Designed and qualified for industrial levelSpecifi...
HFA120FA120P: Features: • Fast recovery time characteristic• Electrically isolated base plate• Large creepage distance between terminal• Simplified mechanical designs, rapid assembly•...
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Parameter | Symbol | TEST CONDITIONS | Value | Unit |
Cathode to anode voltage | VR | 1200 | V | |
Continuous forward current | IF | TC = 62 | 60 | A |
Single pulse forward current | IFSM | TJ = 25 | 350 | A |
Maximum repetitive forward current | IFRM | Rated VR, square wave, 20 kHz, TC = 60 | 130 | A |
Maximum power dissipation | PD | TC = 25 | 337 | W |
Maximum power dissipation | PD | TC = 100 | 135 | W |
RMS isolation voltage | VISOL | Any terminal to case, t = 1 minute | 2500 | V |
Operating junction and storage temperature range |
TJ,Tstg | -55 to+150 |
The dual diode series configuration (HFA120FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application.
The HFA120FA120P semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.
These HFA120FA120P modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.